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| 2SC4215 NPN Silicon Transistor P b Lead(Pb)-Free 1 3 FEATURES: * Power dissipation 1. BASE 2. EMITTER 3. COLLECTOR 2 SOT-323(SC-70) SOT-323 Outline Demensions A Unit:mm SOT-323 B C TOP VIEW D E G H K L J M Dim A B C D E G H J K L M Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 WEITRON http://www.weitron.com.tw 1/4 20-Jan-2011 2SC4215 Maximum Ratings ( TA=25C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature WEITRON Symbol VCBO VCEO VEBO IC PD TJ Tstg Value 40 30 4 20 100 150 -55 to +150 Unit V V V mA mW C C ELECTRICAL CHARACTERISTICS (Ta=25C unless otherwise specified) Parameter Collector-base breakdown voltage I C = 100A, I E =0 Symbol V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO hFE fT Cre C C * rbb NF Gpe Min 40 30 4 40 260 17 Typ 550 0.55 2 23 Max 0.1 0.5 200 25 5 - Unit V V V A A MHz pF pS dB dB Collector-emitter breakdown voltage I C = 1mA, I B =0 Emitter-base breakdown voltage I E = 100A, I C =0 VCB =40V, I E =0 VEB =4V, IC =0 DC current gain VCE =6V, I C = 1mA Transition frequency VCE =6V,I C =1mA Reverse transfer capacitance VCB =10V, f =1MHz Collector-base time constant V CB =6V,I C =1mA, f=30MHz V CC =6V,I C =1mA,f =100MHz Power gain V CC =6V,I C =1mA,f =100MHz CLASSIFICATION OF hFE Rank Range Marking R 40-80 QR O 70-140 QO Y 120-200 QY WEITRON http://www.weitron.com.tw 2/4 20-Jan-2011 2SC4215 Typical Characteristics WEITRON WEITRON http://www.weitron.com.tw 3/4 20-Jan-2011 2SC4215 WEITRON WEITRON http://www.weitron.com.tw 4/4 20-Jan-2011 |
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